? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 150 v v gsm 20 v i d25 t c = 25 c62a i dm t c = 25 c, pulse width limited by t jm 150 a i ar t c = 25 c50a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 350 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-3p / to-220) 1.13/10 nm/lb.in. weight to-3p 5.5 g to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99154a(05/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 33 40 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet ixtq 62n15p ixta 62n15p ixtp 62n15p advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-220 (i xtp ) to-263 (i xta ) to-3p (ixtq) g d s (tab) d (tab) g s g s (tab) v dss = 150 v i d25 = 62 a r ds(on) = 40 m ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixta 62n15p ixtp 62n15p ixtq 62n15p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 14 24 s c iss 2250 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 660 pf c rss 185 pf t d(on) 27 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 38 ns t d(off) r g = 10 ? (external) 76 ns t f 35 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 nc q gd 38 nc r thjc 0.42 k/w r thck (to-3p) 0.21 k/w (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 62 a i sm repetitive 150 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 150 ns -di/dt = 100 a/ s q rm v r = 100 v 2.0 c to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source tab - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2004 ixys all rights reserved ixta 62n15p ixtp 62n15p ixtq 62n15p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 02468101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 01234567 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 00.511.522.533.5 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 62a i d = 31a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.5 1 1.5 2 2.5 3 3.5 4 0 20 40 60 80 100 120 140 160 180 i d - amperes r d s ( o n ) - normalize d t j = 175oc t j = 25oc v gs = 10v v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixta 62n15p ixtp 62n15p ixtq 62n15p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030 40506070 q g - nanocoulombs v g s - volts v ds = 75v i d = 31a i g = 10ma fig. 7. input admittance 0 15 30 45 60 75 90 105 120 567891011 v g s - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 4 8 12 16 20 24 28 32 36 0 15 30 45 60 75 90 105 120 135 150 i d - amperes g f s - siemens t j = -40oc 25oc 150oc fig. 9. source current vs. source-to-drain voltage 0 30 60 90 120 150 180 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds( on) limit 10ms 25s
? 2004 ixys all rights reserved ixta 62n15p ixtp 62n15p ixtq 62n15p fig. 13. m axim um trans ie nt the rm al re s is tance 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 1 10 100 1000 pu ls e w id th - m illis e c o n d s r ( t h ) j c - o c / w
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